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APTM120DA30CT1G

Microchip Technology

Product No:

APTM120DA30CT1G

Manufacturer:

Microchip Technology

Package:

SP1

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Datasheet:

Description:

MOSFET N-CH 1200V 31A SP1

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	560 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	360mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 2.5mA
Supplier Device Package	SP1
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	657W (Tc)
Series	POWER MOS 8™
Package / Case	SP1
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Mfr	Microchip Technology
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	APTM120