Home / Single Bipolar Transistors / BC856BWE6327

BC856BWE6327

Infineon Technologies

Product No:

BC856BWE6327

Manufacturer:

Infineon Technologies

Package:

PG-SOT323-3-1

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Datasheet:

Description:

BIPOLAR GEN PURPOSE TRANSISTOR

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
Frequency - Transition	250MHz
Current - Collector (Ic) (Max)	100 mA
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	65 V
Supplier Device Package	PG-SOT323-3-1
Series	Automotive, AEC-Q101
Transistor Type	PNP
Package / Case	SC-70, SOT-323
Power - Max	330 mW
Mfr	Infineon Technologies
Current - Collector Cutoff (Max)	15nA (ICBO)
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA, 5V
Base Product Number	BC856