Home / Single, Pre-Biased Bipolar Transistors / BCR112WH6327

BCR112WH6327

Infineon Technologies

Product No:

BCR112WH6327

Manufacturer:

Infineon Technologies

Package:

PG-SOT323-3-1

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Datasheet:

Description:

BIPOLAR DIGITAL TRANSISTOR

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Product Information

Parameter Info

User Guide

Frequency - Transition	140 MHz
Current - Collector (Ic) (Max)	100 mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Resistor - Base (R1)	4.7 kOhms
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	PG-SOT323-3-1
Series	Automotive, AEC-Q101
Transistor Type	NPN - Pre-Biased
Package / Case	SC-70, SOT-323
Power - Max	250 mW
Resistor - Emitter Base (R2)	4.7 kOhms
Mfr	Infineon Technologies
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5mA, 5V
Base Product Number	BCR112