Home / Single FETs, MOSFETs / BS108/01,126

BS108/01,126

NXP USA Inc.

Product No:

BS108/01,126

Manufacturer:

NXP USA Inc.

Package:

TO-92-3

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Datasheet:

Description:

MOSFET N-CH 200V 300MA TO92-3

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	120 pF @ 25 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	5Ohm @ 100mA, 2.8V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.8V @ 1mA
Supplier Device Package	TO-92-3
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	1W (Ta)
Series	-
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	2.8V
Package	Tape & Box (TB)
Base Product Number	BS10