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BSB056N10NN3GXUMA1

Infineon Technologies

Product No:

BSB056N10NN3GXUMA1

Manufacturer:

Infineon Technologies

Package:

MG-WDSON-2, CanPAK M™

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 9A/83A 2WDSON

Quantity:

Delivery:

Payment:

In Stock : 24226

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.5625

$3.5625
10

$3.2034

$32.034
100

$2.62428

$262.428
500

$2.23402

$1117.01
1000

$1.884116

$1884.116
2000

$1.789914

$3579.828

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.6mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 100µA
Supplier Device Package	MG-WDSON-2, CanPAK M™
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Series	OptiMOS™
Package / Case	3-WDSON
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 83A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSB056