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BSC046N10NS3GATMA1

Infineon Technologies

Product No:

BSC046N10NS3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-7

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Description:

MOSFET N-CH 100V 17A/100A TDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.6mOhm @ 50A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 120µA
Supplier Device Package	PG-TDSON-8-7
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	156W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 100A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)