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BSC080N12LSGATMA1

Infineon Technologies

Product No:

BSC080N12LSGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8

Batch:

Datasheet:

Description:

TRENCH >=100V PG-TDSON-8

Quantity:

Delivery:

Payment:

In Stock : 2880

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.5745

$2.5745
10

$2.1356

$21.356
100

$1.699835

$169.9835
500

$1.438319

$719.1595
1000

$1.220389

$1220.389
2000

$1.15937

$2318.74

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 112µA
Supplier Device Package	PG-TDSON-8
Drain to Source Voltage (Vdss)	120 V
Power Dissipation (Max)	156W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 99A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)