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BSC084P03NS3EGATMA1

Infineon Technologies

Product No:

BSC084P03NS3EGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-5

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Description:

MOSFET P-CH 30V 14.9A 8TDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	4240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	57.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.4mOhm @ 50A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 110µA
Supplier Device Package	PG-TDSON-8-5
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Ta), 69W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	14.9A (Ta), 78.6A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSC084