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BSC12DN20NS3GATMA1

Infineon Technologies

Product No:

BSC12DN20NS3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-5

Batch:

Datasheet:

Description:

MOSFET N-CH 200V 11.3A 8TDSON

Quantity:

Delivery:

Payment:

In Stock : 3835

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.425

$1.425
10

$1.1666

$11.666
100

$0.907535

$90.7535
500

$0.769234

$384.617
1000

$0.62663

$626.63
2000

$0.589902

$1179.804

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	8.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	125mOhm @ 5.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 25µA
Supplier Device Package	PG-TDSON-8-5
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	50W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.3A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	BSC12DN20