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BSC152N10NSFGATMA1

Infineon Technologies

Product No:

BSC152N10NSFGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-1

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Description:

MOSFET N-CH 100V 9.4A/63A TDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	15.2mOhm @ 25A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 72µA
Supplier Device Package	PG-TDSON-8-1
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	114W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9.4A (Ta), 63A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)