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BSF050N03LQ3G

Infineon Technologies

Product No:

BSF050N03LQ3G

Manufacturer:

Infineon Technologies

Package:

MG-WDSON-2

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Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	MG-WDSON-2
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.2W (Ta), 28W (Tc)
Series	OptiMOS®
Package / Case	DirectFET™ Isometric MX
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	15A (Ta), 60A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk