Home / Single FETs, MOSFETs / BSM180C12P2E202

BSM180C12P2E202

Rohm Semiconductor

Product No:

BSM180C12P2E202

Manufacturer:

Rohm Semiconductor

Package:

Module

Batch:

Datasheet:

Description:

SICFET N-CH 1200V 204A MODULE

Quantity:

Delivery:

Payment:

In Stock : 4

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$612.541

$612.541
12

$589.516962

$7074.203544

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for BSM180C12P2E202, please feel free to contact us. To facilitate the processing of your inquiry, kindly include BSM180C12P2E202 and the required quantity in your RFQ. IICSEMI provides the latest quote for BSM180C12P2E202 without requiring registration. Latest information on BSM180C12P2E202: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs BSM180C12P2E202 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	20000 pF @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	-
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 35.2mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	1360W (Tc)
Series	-
Package / Case	Module
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	204A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+22V, -6V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tray
Base Product Number	BSM180