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BSM180D12P2C101

Rohm Semiconductor

Product No:

BSM180D12P2C101

Manufacturer:

Rohm Semiconductor

Package:

Module

Batch:

Datasheet:

Description:

MOSFET 2N-CH 1200V 180A MODULE

Quantity:

Delivery:

Payment:

In Stock : 1

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$448.552

$448.552
10

$435.06105

$4350.6105

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	23000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	-
Rds On (Max) @ Id, Vgs	-
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 35.2mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	1130W
Current - Continuous Drain (Id) @ 25°C	204A (Tc)
Mfr	Rohm Semiconductor
Package	Bulk
Base Product Number	BSM180