Home / FET, MOSFET Arrays / BSM600D12P4G103

BSM600D12P4G103

Rohm Semiconductor

Product No:

BSM600D12P4G103

Manufacturer:

Rohm Semiconductor

Package:

Module

Batch:

Datasheet:

Description:

1200V, 567A, HALF BRIDGE, FULL S

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for BSM600D12P4G103, please feel free to contact us. To facilitate the processing of your inquiry, kindly include BSM600D12P4G103 and the required quantity in your RFQ. IICSEMI provides the latest quote for BSM600D12P4G103 without requiring registration. Latest information on BSM600D12P4G103: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs BSM600D12P4G103 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
FET Feature	Standard
Configuration	2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	59000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	-
Product Status	Active
Vgs(th) (Max) @ Id	4.8V @ 291.2mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	1.78kW (Tc)
Current - Continuous Drain (Id) @ 25°C	567A (Tc)
Mfr	Rohm Semiconductor
Package	Box
Base Product Number	BSM600