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BSP296L6327HTSA1

Infineon Technologies

Product No:

BSP296L6327HTSA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-4

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Description:

MOSFET N-CH 100V 1.1A SOT223-4

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	364 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	17.2 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	700mOhm @ 1.1A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.8V @ 400µA
Supplier Device Package	PG-SOT223-4
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.79W (Ta)
Series	SIPMOS®
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)