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BSP613PL6327HUSA1

Infineon Technologies

Product No:

BSP613PL6327HUSA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-4

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Description:

MOSFET P-CH 60V 2.9A SOT223-4

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	130mOhm @ 2.9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	PG-SOT223-4
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1.8W (Ta)
Series	SIPMOS®
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)