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BSP89L6327HTSA1

Infineon Technologies

Product No:

BSP89L6327HTSA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-4-21

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 240V 350MA SOT223-4

Quantity:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6Ohm @ 350mA, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 1.8V @ 108µA
Supplier Device Package PG-SOT223-4-21
Drain to Source Voltage (Vdss) 240 V
Power Dissipation (Max) 1.8W (Ta)
Series SIPMOS®
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number BSP89

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