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BSS225

Infineon Technologies

Product No:

BSS225

Manufacturer:

Infineon Technologies

Package:

PG-SOT89

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Datasheet:

Description:

MOSFET N-CH 600V 90MA SOT89

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	131 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	5.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	45Ohm @ 90mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 94µA
Supplier Device Package	PG-SOT89
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	1W (Ta)
Series	SIPMOS®
Package / Case	TO-243AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	90mA (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)