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BSZ120P03NS3EGATMA1

Infineon Technologies

Product No:

BSZ120P03NS3EGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8

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Description:

MOSFET P-CH 30V 11A/40A 8TSDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 20A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.1V @ 73µA
Supplier Device Package	PG-TSDSON-8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.1W (Ta), 52W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 40A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)