Home / Single FETs, MOSFETs / BSZ12DN20NS3G

BSZ12DN20NS3G

Infineon Technologies

Product No:

BSZ12DN20NS3G

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8

Batch:

Datasheet:

Description:

BSZ12DN20 - 12V-300V N-CHANNEL P

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for BSZ12DN20NS3G, please feel free to contact us. To facilitate the processing of your inquiry, kindly include BSZ12DN20NS3G and the required quantity in your RFQ. IICSEMI provides the latest quote for BSZ12DN20NS3G without requiring registration. Latest information on BSZ12DN20NS3G: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs BSZ12DN20NS3G latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	8.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	125mOhm @ 5.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 25µA
Supplier Device Package	PG-TSDSON-8
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	50W (Tc)
Series	OptiMOS™ 3
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.3A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk