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BTS282ZE3230

Infineon Technologies

Product No:

BTS282ZE3230

Manufacturer:

Infineon Technologies

Package:

PG-TO220-7-12

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 232 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 240µA
Supplier Device Package PG-TO220-7-12
Drain to Source Voltage (Vdss) 49 V
Power Dissipation (Max) 300W (Tc)
Series TEMPFET®
Package / Case TO-220-7
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk

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