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BUK7E5R2-100E,127-NXP

NXP USA Inc.

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NXP USA Inc.

Package:

I2PAK

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Description:

PFET, 120A I(D), 100V, 0.0052OHM

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	5.2mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	349W (Tc)
Series	Automotive, AEC-Q101, TrenchMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube