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BUK9E08-55B,127

NXP Semiconductors

Product No:

BUK9E08-55B,127

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NXP Semiconductors

Package:

I2PAK

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Description:

NEXPERIA BUK9E08-55B - 75A, 55V,

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	7mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	203W (Tc)
Series	Automotive, AEC-Q101, TrenchMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Mfr	NXP Semiconductors
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Bulk