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BUZ32H3045AATMA1

Infineon Technologies

Product No:

BUZ32H3045AATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

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Description:

MOSFET N-CH 200V 9.5A TO263-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	530 pF @ 25 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	400mOhm @ 6A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	PG-TO263-3-2
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	75W (Tc)
Series	SIPMOS®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9.5A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	BUZ32