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DMN65D7LFR4-7

Diodes Incorporated

Product No:

DMN65D7LFR4-7

Manufacturer:

Diodes Incorporated

Package:

X2-DFN1010-4 (Type B)

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Description:

MOSFET BVDSS: 41V~60V X2-DFN1010

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	41 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	1.04 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5Ohm @ 40mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	X2-DFN1010-4 (Type B)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	600mW (Ta)
Series	-
Package / Case	4-XDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	260mA (Ta)
Mfr	Diodes Incorporated
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	DMN65