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DMT10H9M9SH3

Diodes Incorporated

Product No:

DMT10H9M9SH3

Manufacturer:

Diodes Incorporated

Package:

TO-251

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Description:

MOSFET BVDSS: 61V~100V TO251 TUB

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	9mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-251
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	114W (Tc)
Series	-
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Mfr	Diodes Incorporated
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Base Product Number	DMT10