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DMTH8008LFGQ-7

Diodes Incorporated

Product No:

DMTH8008LFGQ-7

Manufacturer:

Diodes Incorporated

Package:

POWERDI3333-8

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Description:

MOSFET BVDSS: 61V~100V POWERDI33

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2254 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	37.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.9mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	POWERDI3333-8
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	1.2W (Ta), 50W (Tc)
Series	Automotive, AEC-Q101
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 70A (Tc)
Mfr	Diodes Incorporated
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)