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EPC2012

EPC

Product No:

EPC2012

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EPC

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Die

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Description:

GANFET N-CH 200V 3A DIE

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for EPC2012, please feel free to contact us. To facilitate the processing of your inquiry, kindly include EPC2012 and the required quantity in your RFQ. IICSEMI provides the latest quote for EPC2012 without requiring registration. Latest information on EPC2012: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs EPC2012 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

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Operating Temperature	-40°C ~ 125°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	145 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	1.8 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	100mOhm @ 3A, 5V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	-
Series	eGaN®
Package / Case	Die
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Mfr	EPC
Vgs (Max)	+6V, -5V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Tape & Reel (TR)
Base Product Number	EPC20