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ES1JLHRVG

Taiwan Semiconductor Corporation

Product No:

ES1JLHRVG

Package:

Sub SMA

Batch:

-

Datasheet:

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Description:

DIODE GEN PURP 600V 1A SUB SMA

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Capacitance @ Vr, F 8pF @ 4V, 1MHz
Mounting Type Surface Mount
Product Status Active
Supplier Device Package Sub SMA
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Series Automotive, AEC-Q101
Package / Case DO-219AB
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A
Mfr Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max) 600 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number ES1J

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