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F1T3GH

Taiwan Semiconductor Corporation

Product No:

F1T3GH

Package:

TS-1

Batch:

-

Datasheet:

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Description:

DIODE GEN PURP 200V 1A TS-1

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns
Capacitance @ Vr, F 15pF @ 4V, 1MHz
Mounting Type Through Hole
Product Status Active
Supplier Device Package TS-1
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Series Automotive, AEC-Q101
Package / Case T-18, Axial
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1 A
Mfr Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max) 200 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -55°C ~ 150°C

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