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FCP110N65F

onsemi

Product No:

FCP110N65F

Manufacturer:

onsemi

Package:

TO-220-3

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Datasheet:

Description:

MOSFET N-CH 650V 35A TO220-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4895 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	145 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	110mOhm @ 17.5A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	5V @ 3.5mA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	357W (Tc)
Series	FRFET®, SuperFET® II
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FCP110