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FCP11N60N-F102

onsemi

Product No:

FCP11N60N-F102

Manufacturer:

onsemi

Package:

TO-220F

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Datasheet:

Description:

MOSFET N-CH 600V 10.8A TO220F

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1505 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	35.6 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	299mOhm @ 5.4A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220F
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	94W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10.8A (Tc)
Mfr	onsemi
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FCP11