Home / Single FETs, MOSFETs / FCP165N65S3R0

FCP165N65S3R0

Fairchild Semiconductor

Product No:

FCP165N65S3R0

Manufacturer:

Fairchild Semiconductor

Package:

TO-220-3

Batch:

Datasheet:

Description:

FCP165N65S3R0 - POWER MOSFET, N-

Quantity:

Delivery:

Payment:

In Stock : 2115

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

143

$1.995

$285.285

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FCP165N65S3R0, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FCP165N65S3R0 and the required quantity in your RFQ. IICSEMI provides the latest quote for FCP165N65S3R0 without requiring registration. Latest information on FCP165N65S3R0: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FCP165N65S3R0 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	165mOhm @ 9.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.5V @ 440mA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	154W (Tc)
Series	SuperFET® III
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk