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FCP850N80Z

Fairchild Semiconductor

Product No:

FCP850N80Z

Manufacturer:

Fairchild Semiconductor

Package:

TO-220-3

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Datasheet:

Description:

MOSFET N-CH 800V 8A TO220-3

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Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	850mOhm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 600µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	136W (Tc)
Series	SuperFET® II
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk