Home / Single FETs, MOSFETs / FDB047N10

FDB047N10

Fairchild Semiconductor

Product No:

FDB047N10

Manufacturer:

Fairchild Semiconductor

Package:

D2PAK (TO-263)

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FDB047N10, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FDB047N10 and the required quantity in your RFQ. IICSEMI provides the latest quote for FDB047N10 without requiring registration. Latest information on FDB047N10: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FDB047N10 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.7mOhm @ 75A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	D2PAK (TO-263)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	375W (Tc)
Series	PowerTrench®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk