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FDB120N10

Fairchild Semiconductor

Product No:

FDB120N10

Manufacturer:

Fairchild Semiconductor

Package:

D2PAK (TO-263)

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Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 7

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5605 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 74A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	D2PAK (TO-263)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	170W (Tc)
Series	PowerTrench®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	74A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk