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FDC658P

onsemi

Product No:

FDC658P

Manufacturer:

onsemi

Package:

SuperSOT™-6

Batch:

-

Datasheet:

pdf.png

Description:

MOSFET P-CH 30V 4A SUPERSOT6

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SuperSOT™-6
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.6W (Ta)
Series PowerTrench®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number FDC658

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