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FDC855N

Fairchild Semiconductor

Product No:

FDC855N

Package:

SuperSOT™-6

Batch:

-

Datasheet:

-

Description:

SMALL SIGNAL FIELD-EFFECT TRANSI

Quantity:

Delivery:

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Payment:

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In Stock : 10062

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1265

    $0.228

    $288.42

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FDC855N, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FDC855N and the required quantity in your RFQ. IICSEMI provides the latest quote for FDC855N without requiring registration. Latest information on FDC855N: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FDC855N latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 655 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 27mOhm @ 6.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SuperSOT™-6
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.6W (Ta)
Series PowerTrench®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6.1A (Ta)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk

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