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FDFMA2N028Z

Fairchild Semiconductor

Product No:

FDFMA2N028Z

Package:

6-MicroFET (2x2)

Batch:

-

Datasheet:

-

Description:

SMALL SIGNAL FIELD-EFFECT TRANSI

Quantity:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Isolated)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 68mOhm @ 3.7A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package 6-MicroFET (2x2)
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1.4W (Tj)
Series PowerTrench®
Package / Case 6-VDFN Exposed Pad
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Mfr Fairchild Semiconductor
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Bulk

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