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FDMD8900

Fairchild Semiconductor

Product No:

FDMD8900

Package:

12-Power3.3x5

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, N

Quantity:

Delivery:

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Payment:

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In Stock : 15410

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 304

    $0.9405

    $285.912

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 2605pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4mOhm @ 19A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 12-Power3.3x5
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 12-PowerWDFN
Technology MOSFET (Metal Oxide)
Power - Max 2.1W
Current - Continuous Drain (Id) @ 25°C 19A, 17A
Mfr Fairchild Semiconductor
Package Bulk
Base Product Number FDMD89

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