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FDP100N10

Fairchild Semiconductor

Product No:

FDP100N10

Package:

TO-220-3

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 7

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 2970

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 159

    $1.7955

    $285.4845

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 10mOhm @ 75A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 208W (Tc)
Series PowerTrench®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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