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FDR836P

Fairchild Semiconductor

Product No:

FDR836P

Package:

SuperSOT™-8

Batch:

-

Datasheet:

-

Description:

P-CHANNEL MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 15000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 333

    $0.855

    $284.715

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 30mOhm @ 6.1A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package SuperSOT™-8
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 900mW (Ta)
Series PowerTrench®
Package / Case 8-LSOP (0.130", 3.30mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6.1A (Ta)
Mfr Fairchild Semiconductor
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Bulk

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