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FESB8JT-E3/81

Vishay General Semiconductor - Diodes Division

Product No:

FESB8JT-E3/81

Package:

TO-263AB (D²PAK)

Batch:

-

Datasheet:

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Description:

DIODE GEN PURP 600V 8A TO263AB

Quantity:

Delivery:

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Payment:

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In Stock : 800

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.2255

    $1.2255

  • 10

    $1.09915

    $10.9915

  • 100

    $0.857185

    $85.7185

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Product Information

Parameter Info

User Guide

Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Capacitance @ Vr, F -
Mounting Type Surface Mount
Product Status Active
Supplier Device Package TO-263AB (D²PAK)
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 8 A
Mfr Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 600 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 8A
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number FESB8

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