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FF11MR12W1M1B70BPSA1

Infineon Technologies

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Infineon Technologies

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AG-EASY1B

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Description:

LOW POWER EASY AG-EASY1B-2

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Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	7360pF @ 800V
Gate Charge (Qg) (Max) @ Vgs	248nC @ 15V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	11.3mOhm @ 100A, 15V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.55V @ 40mA
Supplier Device Package	AG-EASY1B
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	CoolSiC™+
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	-
Current - Continuous Drain (Id) @ 25°C	100A (Tj)
Mfr	Infineon Technologies
Package	Tray
Base Product Number	FF11MR12