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FQA8N80C_F109

onsemi

Product No:

FQA8N80C_F109

Manufacturer:

onsemi

Package:

TO-3P

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 800V 8.4A TO3P

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.55Ohm @ 4.2A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-3P
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 220W (Tc)
Series QFET®
Package / Case TO-3P-3, SC-65-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8.4A (Tc)
Mfr onsemi
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number FQA8

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