Home / Single FETs, MOSFETs / FQB34N20LTM

FQB34N20LTM

Fairchild Semiconductor

Product No:

FQB34N20LTM

Manufacturer:

Fairchild Semiconductor

Package:

D2PAK (TO-263)

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQB34N20LTM, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQB34N20LTM and the required quantity in your RFQ. IICSEMI provides the latest quote for FQB34N20LTM without requiring registration. Latest information on FQB34N20LTM: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQB34N20LTM latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	75mOhm @ 15.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	D2PAK (TO-263)
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	3.13W (Ta), 180W (Tc)
Series	QFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Bulk