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FQB6N90TM

Fairchild Semiconductor

Product No:

FQB6N90TM

Package:

D2PAK (TO-263)

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.9Ohm @ 2.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package D2PAK (TO-263)
Drain to Source Voltage (Vdss) 900 V
Power Dissipation (Max) 3.13W (Ta), 167W (Tc)
Series QFET™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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