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FQE10N20LCTU

onsemi

Product No:

FQE10N20LCTU

Manufacturer:

onsemi

Package:

TO-126-3

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Datasheet:

Description:

MOSFET N-CH 200V 4A TO126-3

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQE10N20LCTU, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQE10N20LCTU and the required quantity in your RFQ. IICSEMI provides the latest quote for FQE10N20LCTU without requiring registration. Latest information on FQE10N20LCTU: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQE10N20LCTU latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	360mOhm @ 2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	TO-126-3
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	12.8W (Tc)
Series	QFET®
Package / Case	TO-225AA, TO-126-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tube
Base Product Number	FQE1