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FQN1N50CTA

Fairchild Semiconductor

Product No:

FQN1N50CTA

Package:

TO-92-3

Batch:

-

Datasheet:

-

Description:

SMALL SIGNAL FIELD-EFFECT TRANSI

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 6Ohm @ 190mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-92-3
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 890mW (Ta), 2.08W (Tc)
Series QFET®
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 380mA (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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