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FQPF33N10

Fairchild Semiconductor

Product No:

FQPF33N10

Package:

TO-220F-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 18A TO220F

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 52mOhm @ 9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220F-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 41W (Tc)
Series QFET®
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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